Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure

Qi Wang; Yaomi Itoh; Tsuyoshi Hasegawa; Tohru Tsuruoka; Shu Yamaguchi; Satoshi Watanabe; Toshiro Hiramoto; Masakazu Aono

doi:10.1063/1.4811122

Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta₂O_5-x/Pt, Pt structure

Qi Wang^*, Yaomi Itoh, Tsuyoshi Hasegawa, Tohru Tsuruoka, Shu Yamaguchi, Satoshi Watanabe, Toshiro Hiramoto, Masakazu Aono

^*この研究の対応する著者

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

Nonvolatile three-terminal operation is demonstrated using a Pt/Ta ₂O_5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta₂O_5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 ⁶.

本文言語	English
論文番号	233508
ジャーナル	Applied Physics Letters
巻	102
号	23
DOI	https://doi.org/10.1063/1.4811122
出版ステータス	Published - 2013 6月 10
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.4811122

他のファイルとリンク

引用スタイル

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title = "Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure",

abstract = "Nonvolatile three-terminal operation is demonstrated using a Pt/Ta 2O5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 6.",

author = "Qi Wang and Yaomi Itoh and Tsuyoshi Hasegawa and Tohru Tsuruoka and Shu Yamaguchi and Satoshi Watanabe and Toshiro Hiramoto and Masakazu Aono",

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AU - Wang, Qi

AU - Itoh, Yaomi

AU - Hasegawa, Tsuyoshi

AU - Tsuruoka, Tohru

AU - Yamaguchi, Shu

AU - Watanabe, Satoshi

AU - Hiramoto, Toshiro

AU - Aono, Masakazu

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PY - 2013/6/10

Y1 - 2013/6/10

N2 - Nonvolatile three-terminal operation is demonstrated using a Pt/Ta 2O5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 6.

AB - Nonvolatile three-terminal operation is demonstrated using a Pt/Ta 2O5-x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5-x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 10 6.

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