Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Yuya Kitabayashi; Takuya Kudo; Hidetoshi Tsuboi; Tetsuya Yamada; Dechen Xu; Masanobu Shibata; Daisuke Matsumura; Yuya Hayashi; Mohd Syamsul; Masafumi Inaba; Atsushi Hiraiwa; Hiroshi Kawarada

doi:10.1109/LED.2017.2661340

Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

Yuya Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi, Tetsuya Yamada, Dechen Xu, Masanobu Shibata, Daisuke Matsumura, Yuya Hayashi, Mohd Syamsul, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

基幹理工学部

研究成果: Article › 査読

133 被引用数 (Scopus)

抄録

Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage V_th of -2.5 - 4 V.

本文言語	English
論文番号	7837668
ページ（範囲）	363-366
ページ数	4
ジャーナル	IEEE Electron Device Letters
巻	38
号	3
DOI	https://doi.org/10.1109/LED.2017.2661340
出版ステータス	Published - 2017 3月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/LED.2017.2661340

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title = "Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage",

abstract = "Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.",

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author = "Yuya Kitabayashi and Takuya Kudo and Hidetoshi Tsuboi and Tetsuya Yamada and Dechen Xu and Masanobu Shibata and Daisuke Matsumura and Yuya Hayashi and Mohd Syamsul and Masafumi Inaba and Atsushi Hiraiwa and Hiroshi Kawarada",

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AU - Kitabayashi, Yuya

AU - Kudo, Takuya

AU - Tsuboi, Hidetoshi

AU - Yamada, Tetsuya

AU - Xu, Dechen

AU - Shibata, Masanobu

AU - Matsumura, Daisuke

AU - Hayashi, Yuya

AU - Syamsul, Mohd

AU - Inaba, Masafumi

AU - Hiraiwa, Atsushi

AU - Kawarada, Hiroshi

PY - 2017/3

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N2 - Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.

AB - Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation in devices, because the C-H channel features a p-type inversion layer; however, normally-off devices are preferable in power MOSFETs from the viewpoint of fail safety. We fabricated hydrogen-terminated (C-H) diamond MOSFETs using a partially oxidized (partial C-O) channel. The fabricated MOSFETs showed a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage Vth of -2.5 - 4 V.

KW - 2 dimensional hole gas

KW - MOSFETs

KW - diamond

KW - high voltage

KW - normally-off

KW - wide bandgap semiconductor

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Normally-Off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage

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