Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 0.25 μm Dual Gate CMOS

T. Kuroi, T. Yamaguchi, M. Shirahata, Y. Okumura, Y. Kawasaki, M. Inuishi, N. Tsubouchi

研究成果: Conference article › 査読

8 被引用数 (Scopus)

抄録

We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.2S μm dual gate CMOS. It was founded that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was founded that Ti-salicided shallow junction for 0.2S μm CMOS can be successfully formed without increasing the junction leakage current

本文言語English
ページ（範囲）325-328
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
出版ステータスPublished - 1993
外部発表はい
イベントProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
継続期間: 1993 12月 5 → 1993 12月 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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