TY - JOUR
T1 - Novel nitride semiconductor devices
AU - Makimoto, Toshiki
PY - 2004/6
Y1 - 2004/6
N2 - Nitride semiconductors are best known as materials for blue light emitting diodes, but they have unique characteristics applicable to other devices. This paper describes three such novel nitride devices that NTT Basic Research Laboratories has developed: (1) a nitride heterojunction bipolar transistor, which shows a very-high power density of 270,000 W/cm2, (2) a nitride field emission display, which is promising for an efficient, reliable, and bright flat panel display, and (3) a nitride surface emitting laser diode, which should lead to micro optical devices and optoelectronic integrated circuits.
AB - Nitride semiconductors are best known as materials for blue light emitting diodes, but they have unique characteristics applicable to other devices. This paper describes three such novel nitride devices that NTT Basic Research Laboratories has developed: (1) a nitride heterojunction bipolar transistor, which shows a very-high power density of 270,000 W/cm2, (2) a nitride field emission display, which is promising for an efficient, reliable, and bright flat panel display, and (3) a nitride surface emitting laser diode, which should lead to micro optical devices and optoelectronic integrated circuits.
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M3 - Article
AN - SCOPUS:4344713949
SN - 1348-3447
VL - 2
SP - 12
EP - 18
JO - NTT Technical Review
JF - NTT Technical Review
IS - 6
ER -