A poly-Si S/D transistor with self-aligned titanium silicidation has been developed without a sidewall spacer. It has excellent electrical characteristics and the transistor performance is improved by the reduction of poly-Si resistance. The effects of etching damage of the active channel regions on the transistor characteristics are investigated. It is concluded that the etching damage is removed by sacrifice oxidation of 20 nm.
|Digest of Technical Papers - Symposium on VLSI Technology
|Published - 1988 12月 1
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