Nucleation and growth of copper nanoparticles on silicon surfaces

A. Singh*, K. Luening, S. Brennan, T. Homma, N. Kubo, P. Pianetta


研究成果: Conference article査読

3 被引用数 (Scopus)


The recent adoption of copper interconnect technology by the semiconductor industry, has led to great interest in understanding the mechanisms of copper metal deposition onto silicon wafer surfaces from ultra pure water (UPW) solutions. We have studied these processes by using total reflection x-ray fluorescence (TXRF) and x-ray absorption near edge spectroscopy (XANES) in a grazing incidence geometry to determine the surface concentration and chemical state of copper atoms on intentionally contaminated Si surfaces. These measurements established that in deoxygenated UPW, copper is deposited on the silicon surface in the form of metallic nanoparticles with sizes up to 16nm. However, in non-deoxygenated UPW, the copper is incorporated uniformly into the silicon surface oxide as Cu oxide.

ジャーナルPhysica Scripta T
出版ステータスPublished - 2005
イベント12th X-ray Absorption Fine Structure International Conference, XAFS12 - Malmo, Sweden
継続期間: 2003 6月 232003 6月 27

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 数理物理学
  • 凝縮系物理学


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