Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

T. Kakitsuka; Y. Shibata; M. Itoh; Y. Tohmori; Y. Yoshikuni

Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

T. Kakitsuka^*, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

^*この研究の対応する著者

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

本文言語	English
ページ	485-488
ページ数	4
出版ステータス	Published - 2001
外部発表	はい
イベント	2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan 継続期間: 2001 5月 14 → 2001 5月 18

Conference

Conference	2001 International Conference on Indium Phosphide and Related Materials
国/地域	Japan
City	Nara
Period	01/5/14 → 01/5/18

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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引用スタイル

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title = "Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers",

abstract = "Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.",

author = "T. Kakitsuka and Y. Shibata and M. Itoh and Y. Tohmori and Y. Yoshikuni",

year = "2001",

language = "English",

pages = "485--488",

note = "2001 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2001 Through 18-05-2001",

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TY - CONF

T1 - Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

AU - Kakitsuka, T.

AU - Shibata, Y.

AU - Itoh, M.

AU - Tohmori, Y.

AU - Yoshikuni, Y.

PY - 2001

Y1 - 2001

N2 - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

AB - Polarization dependence in 1.55-μm SOAs based on tensile-strained bulk InGaAsP is analyzed numerically, focusing on strain relaxation in the active layer. We demonstrate that the strain introduced during the epitaxial growth of the active layer is reduced due to the InP-buried structure. The polarization dependence of the gain is calculated by using the k·p method, taking strain relaxation into account and compared with experimental results. The change of strain has non-negligible effects that have to be considered in choosing of the strain for polarization independence of the gain.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034847557&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034847557

SP - 485

EP - 488

T2 - 2001 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2001 through 18 May 2001

ER -

Numerical analysis of polarization sensitivity in strained bulk semiconductor optical amplifiers

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Conference

ASJC Scopus subject areas

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