TY - GEN
T1 - O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures
AU - Yamamoto, Naokatsu
AU - Fujioka, Hiroki
AU - Akahane, Kouichi
AU - Katouf, Redouane
AU - Kawanishi, Tetsuya
AU - Takai, Hiroshi
AU - Sotobayashi, Hideyuki
PY - 2009/12/1
Y1 - 2009/12/1
N2 - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
AB - O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
UR - http://www.scopus.com/inward/record.url?scp=84894058965&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894058965&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84894058965
SN - 9781557528698
T3 - Optics InfoBase Conference Papers
BT - Conference on Lasers and Electro-Optics, CLEO 2009
T2 - Conference on Lasers and Electro-Optics, CLEO 2009
Y2 - 31 May 2009 through 5 June 2009
ER -