@article{b2a4df3ebe834023bb4ae2263680551f,
title = "On-chip optical interconnect",
abstract = "We describe a cost-effective and low-powerconsumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: l) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials.",
keywords = "Clocks, Lanthanum-modified lead zirconium titanate (plzt) ceramics, Optical interconnections, Photodiodes",
author = "Keishi Ohashi and Kenichi Nishi and Takanori Shimizu and Masafumi Nakada and Junichi Fujikata and Jun Ushida and Sunao Toru and Koichi Nose and Masayuki Mizuno and Hiroaki Yukawa and Masao Kinoshita and Nobuo Suzuki and Akiko Gomyo and Tsutomu Ishi and Daisuke Okamoto and Katsuya Furue and Toshihide Ueno and Tai Tsuchizawa and Toshifumi Watanabe and Koji Yamada and Itabashi, {Sei Ichi} and Jun Akedo",
note = "Funding Information: Manuscript received February 23, 2009. Current version published June 12, 2009. This work was supported in part by the New Energy Development Organization under the next-generation Semiconductor Materials and Process Technology (MIRAI) Project. K. Ohashi and M. Nakada are with MIRAI-Selete and also with NEC, Nano Electronics ResearchLaboratories,Tsukuba,Ibaraki305-8501,Japan(e-mail:k-ohashi@cb.jp.nec.com). K. Nishi, T. Shimizu, J. Fujikata, J. Ushida, S. Torii, K. Nose, M. Mizuno, H. Yukawa, M. Kinoshita, N. Suzuki, A. Gomyo, T. Ishi, D. Okamoto, K. Furue, and T. Ueno are with MIRAI-Selete, Tsukuba 305-8501, Japan. T. Tsuchizawa, T. Watanabe, K. Yamada and S. Itabashi are with NTT, Microsystem Integration Laboratories, Atsugi 243-0198, Japan. J. Akedo is with AIST, Advanced Manufacturing Research Institute, Tsukuba 305-8566, Japan.",
year = "2009",
month = jul,
doi = "10.1109/JPROC.2009.2020331",
language = "English",
volume = "97",
pages = "1186--1196",
journal = "Proceedings of the Institute of Radio Engineers",
issn = "0018-9219",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}