Low-temperature bonding of crystalline quartz and silicon wafers is described. The bonding has a big potential for MEMS applications because it could integrate the processing and packaging in a single high-tech process. In this work, strong bonding of silicon and crystal quartz wafers close to the mechanical strength of the initial materials has been achieved. Tensile test shows a disruptive stress of the samples at about 35 MPa. High bonding strength is associated with minimization of the residual stresses, optimization of surface activation, and application of an electric field during annealing. Lowest possible annealing temperature and the optimum thickness ratio of silicon and quartz layers have been used in order to minimize the residual stresses.
|ホスト出版物のタイトル||DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS|
|出版ステータス||Published - 2011|
|イベント||2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 - Aix-en-Provence|
継続期間: 2011 5月 11 → 2011 5月 13
|Other||2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011|
|Period||11/5/11 → 11/5/13|
ASJC Scopus subject areas