TY - JOUR
T1 - Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell
AU - Shino, Tomoaki
AU - Ohsawa, Takashi
AU - Higashi, Tomoki
AU - Fujita, Katsuyuki
AU - Kusunoki, Naoki
AU - Minami, Yoshihiro
AU - Morikado, Mutsuo
AU - Nakajima, Hiroomi
AU - Inoh, Kazumi
AU - Hamamoto, Takeshi
AU - Nitayama, Akihiro
PY - 2005/10
Y1 - 2005/10
N2 - A one-transistor memory cell on silicon-on-insulator, called floating-body cell (FBC), has been developed and demonstrated. Threshold voltage difference between the "0"-state and the "1"-state, which is a key parameter for realizing a large-scale memory by FBCs, is measured and analyzed using a 96 kb array diagnostic monitor (ADM). A function test of the ADM yielded a fail-bit probability of 0.002%. A new metric relating to the fail-bit probability, that is, the ratio of the threshold voltage difference over the total threshold voltage variation, is introduced and applied to the measurement results. Read current distributions are also evaluated for various operation voltages. This paper also investigates substrate bias dependence of the threshold voltage unique to fully-depleted devices. Channel impurity and substrate impurity concentration dependence of the threshold voltage are analyzed based on experimental data and device simulation.
AB - A one-transistor memory cell on silicon-on-insulator, called floating-body cell (FBC), has been developed and demonstrated. Threshold voltage difference between the "0"-state and the "1"-state, which is a key parameter for realizing a large-scale memory by FBCs, is measured and analyzed using a 96 kb array diagnostic monitor (ADM). A function test of the ADM yielded a fail-bit probability of 0.002%. A new metric relating to the fail-bit probability, that is, the ratio of the threshold voltage difference over the total threshold voltage variation, is introduced and applied to the measurement results. Read current distributions are also evaluated for various operation voltages. This paper also investigates substrate bias dependence of the threshold voltage unique to fully-depleted devices. Channel impurity and substrate impurity concentration dependence of the threshold voltage are analyzed based on experimental data and device simulation.
KW - Distribution
KW - MOSFETs
KW - Random access memories
KW - Silicon-on-insulator (SOI) technology
KW - Threshold voltage
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U2 - 10.1109/TED.2005.856808
DO - 10.1109/TED.2005.856808
M3 - Article
AN - SCOPUS:33947418989
SN - 0018-9383
VL - 52
SP - 2220
EP - 2225
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
ER -