TY - JOUR
T1 - Optical and structural studies in InGaN quantum well structure laser diodes
AU - Chichibu, Shigefusa F.
AU - Azuhata, Takashi
AU - Sugiyama, Mutsumi
AU - Kitamura, Toshio
AU - Ishida, Yuuki
AU - Okumura, Hajime
AU - Nakanishi, Hisayuki
AU - Sota, Takayuki
AU - Mukai, Takashi
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2001/11
Y1 - 2001/11
N2 - An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.
AB - An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.
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U2 - 10.1116/1.1418404
DO - 10.1116/1.1418404
M3 - Article
AN - SCOPUS:0035519480
SN - 1071-1023
VL - 19
SP - 2177
EP - 2183
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 6
ER -