Optical observation of carrier accumulation in single-walled carbon nanotube transistors

Taishi Takenobu; Yuji Murayama; Masashi Shiraishi; Yoshihiro Iwasa

doi:10.1143/JJAP.45.L1190

Optical observation of carrier accumulation in single-walled carbon nanotube transistors

Taishi Takenobu^*, Yuji Murayama, Masashi Shiraishi, Yoshihiro Iwasa

^*この研究の対応する著者

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

本文言語	English
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	45
号	42-45
DOI	https://doi.org/10.1143/JJAP.45.L1190
出版ステータス	Published - 2006 11月 10
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1143/JJAP.45.L1190

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title = "Optical observation of carrier accumulation in single-walled carbon nanotube transistors",

abstract = "Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.",

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AU - Murayama, Yuji

AU - Shiraishi, Masashi

AU - Iwasa, Yoshihiro

PY - 2006/11/10

Y1 - 2006/11/10

N2 - Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

AB - Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

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KW - Optical properties

KW - Single-walled carbon nanotube

KW - Thin film

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Optical observation of carrier accumulation in single-walled carbon nanotube transistors

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