Optically controlled S- and N-shaped negative differential resistances by R-TOPS

H. Sakata; K. Utaka; Y. Matsushima

Optically controlled S- and N-shaped negative differential resistances by R-TOPS

H. Sakata^*, K. Utaka, Y. Matsushima

^*この研究の対応する著者

研究成果: Conference article › 査読

抄録

Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.

本文言語	English
ページ（範囲）	524-527
ページ数	4
ジャーナル	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版ステータス	Published - 1995 1月 1
外部発表	はい
イベント	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn 継続期間: 1995 5月 9 → 1995 5月 13

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "Optically controlled S- and N-shaped negative differential resistances by R-TOPS",

abstract = "Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.",

author = "H. Sakata and K. Utaka and Y. Matsushima",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "524--527",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 7th International Conference on Indium Phosphide and Related Materials ; Conference date: 09-05-1995 Through 13-05-1995",

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T1 - Optically controlled S- and N-shaped negative differential resistances by R-TOPS

AU - Sakata, H.

AU - Utaka, K.

AU - Matsushima, Y.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.

AB - Two types of optoelectronic switching devices using negative differential resistance (NDR) are proposed. One is a triangular-barrier optoelectronic switch which consists of a triangular-barrier phototransistor (TBP). The other is a resonant-tunneling triangular barrier optoelectronic switch (R-TOPS) which consists of a double-barrier resonant-tunneling diode and a TBP. Optically controlled S- and N-shaped NDRs in the structure of an R-TOPS are reported.

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M3 - Conference article

AN - SCOPUS:0029216913

SN - 1092-8669

SP - 524

EP - 527

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials

Y2 - 9 May 1995 through 13 May 1995

ER -

Optically controlled S- and N-shaped negative differential resistances by R-TOPS

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