Optimum design of gate/N- overlapped LDD transistor

M. Inuishi*, K. Mitsui, S. Komori, M. Shimizu, H. Oda, J. Mitsuhashi, K. Tsukamoto


研究成果: Conference article査読

12 被引用数 (Scopus)


The authors present the optimum design and fabrication of the overlapped LDD (lightly doped drain) NMOS transistor. They use simulation to clarify the internal state of the overlapped LDD transistor under operation, evaluate the improved electrical characteristics of devices fabricated by rotational oblique N- implantation, and show that the optimum design overlapped LDD can surpass the conventional LDD in device characteristics and circuit speed. They also show that oblique implantation is a promising method for forming the gate/N- overlapped structures due to the simple control of the N- region in terms of implantation angle and energy.

ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1989 12月 1
イベントNinth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn
継続期間: 1989 5月 221989 5月 25

ASJC Scopus subject areas

  • 電子工学および電気工学


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