Organic single-crystal schottky gate transistors

Toshihiko Kaji; Taishi Takenobu; Alberto F. Morpurgo; Yoshihiro Iwasa

doi:10.1002/adma.200900276

Organic single-crystal schottky gate transistors

Toshihiko Kaji^*, Taishi Takenobu, Alberto F. Morpurgo, Yoshihiro Iwasa

^*この研究の対応する著者

研究成果: Article › 査読

36 被引用数 (Scopus)

抄録

Schottky contacts and Schottky gate transistors on organic single crystals are successfully fabricated, and enable the complete understanding of the operating mechanism as well as a full description of the energy-band diagram. This represents a considerable step forward in the understanding of organic semiconductors, and offers a viable route for organic-device design.

本文言語	English
ジャーナル	Advanced Materials
巻	21
号	36
DOI	https://doi.org/10.1002/adma.200900276
出版ステータス	Published - 2009
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
材料力学
機械工学

文献へのアクセス

10.1002/adma.200900276

他のファイルとリンク

引用スタイル

@article{6f0f86052bee4b38996a0b0f682384cb,

title = "Organic single-crystal schottky gate transistors",

abstract = "Schottky contacts and Schottky gate transistors on organic single crystals are successfully fabricated, and enable the complete understanding of the operating mechanism as well as a full description of the energy-band diagram. This represents a considerable step forward in the understanding of organic semiconductors, and offers a viable route for organic-device design.",

author = "Toshihiko Kaji and Taishi Takenobu and Morpurgo, {Alberto F.} and Yoshihiro Iwasa",

year = "2009",

doi = "10.1002/adma.200900276",

language = "English",

volume = "21",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "36",

}

TY - JOUR

T1 - Organic single-crystal schottky gate transistors

AU - Kaji, Toshihiko

AU - Takenobu, Taishi

AU - Morpurgo, Alberto F.

AU - Iwasa, Yoshihiro

PY - 2009

Y1 - 2009

N2 - Schottky contacts and Schottky gate transistors on organic single crystals are successfully fabricated, and enable the complete understanding of the operating mechanism as well as a full description of the energy-band diagram. This represents a considerable step forward in the understanding of organic semiconductors, and offers a viable route for organic-device design.

AB - Schottky contacts and Schottky gate transistors on organic single crystals are successfully fabricated, and enable the complete understanding of the operating mechanism as well as a full description of the energy-band diagram. This represents a considerable step forward in the understanding of organic semiconductors, and offers a viable route for organic-device design.

UR - http://www.scopus.com/inward/record.url?scp=70349762694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349762694&partnerID=8YFLogxK

U2 - 10.1002/adma.200900276

DO - 10.1002/adma.200900276

M3 - Article

AN - SCOPUS:70349762694

SN - 0935-9648

VL - 21

JO - Advanced Materials

JF - Advanced Materials

IS - 36

ER -

Organic single-crystal schottky gate transistors

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル