TY - JOUR
T1 - Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs
AU - Matsudaira, Hiroki
AU - Miyamoto, Shingo
AU - Ishizaka, Hiroaki
AU - Umezawa, Hitoshi
AU - Kawarada, Hiroshi
N1 - Funding Information:
Manuscript received April 8, 2003. This work was supported in part by The New Energy and Industrial Technology Development Organization and in part by the Center of Excellence Research and Scientific Research (A) from the Ministry of Education, Culture, Sports, Science, and Technology and the Advanced Research Institute for Science and Engineering, Waseda University, Tokyo, Japan. The review of this letter was arranged by Editor K. De Meyer.
PY - 2004/7
Y1 - 2004/7
N2 - Submicrometer-gate (0.2-0.5-μm) diamond metal-insulator-semiconductor field-effect transistors (MIS-FETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-μm-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 × 106 cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.
AB - Submicrometer-gate (0.2-0.5-μm) diamond metal-insulator-semiconductor field-effect transistors (MIS-FETs) were fabricated on an H-terminated diamond surface. The maximum transconductance in dc mode reaches 165 mS/mm, while the average transconductance is 70 mS/mm in submicrometer-gate diamond MISFETs. The highest cutoff frequency of 23 GHz and the maximum frequency of oscillation of 25 GHz are realized in the 0.2-μm-gate diamond MISFET. From the intrinsic transconductances or the cutoff frequencies, the saturation velocities are estimated to be 4 × 106 cm/s in the submicrometer-gate FETs. They are reduced by gate-drain capacitance and source resistance.
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U2 - 10.1109/LED.2004.831200
DO - 10.1109/LED.2004.831200
M3 - Article
AN - SCOPUS:3342957444
SN - 0741-3106
VL - 25
SP - 480
EP - 482
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 7
ER -