TY - JOUR
T1 - Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors
AU - Chang, Yu Hao
AU - Iyama, Yutaro
AU - Tadenuma, Kaito
AU - Kawaguchi, Shuto
AU - Takarada, Teruaki
AU - Falina, Shaili
AU - Syamsul, Mohd
AU - Kawarada, Hiroshi
N1 - Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2021/3
Y1 - 2021/3
N2 - pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron-doped diamond (BDD) solution-gate field-effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates a high pH sensitivity of 67.4 and 34.9 mV pH−1 in acid and alkaline pH regions, respectively.
AB - pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron-doped diamond (BDD) solution-gate field-effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates a high pH sensitivity of 67.4 and 34.9 mV pH−1 in acid and alkaline pH regions, respectively.
KW - boron-doping
KW - field-effect transistors
KW - fluorocarbon
KW - pH sensing
KW - polycrystalline diamond
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U2 - 10.1002/pssa.202000278
DO - 10.1002/pssa.202000278
M3 - Article
AN - SCOPUS:85091490746
SN - 1862-6300
VL - 218
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 5
M1 - 2000278
ER -