TY - GEN
T1 - Overview and future challenge of Floating Body Cell (FBC) technology for embedded applications
AU - Nitayama, Akihiro
AU - Ohsawa, Takashi
AU - Hamamoto, Takeshi
PY - 2006/12/1
Y1 - 2006/12/1
N2 - A one-transistor memory cell on silicon-on-insulator, called Floating Body Cell (FBC), has been developed for high density embedded DRAM applications. The functionality of a 128Mb FBC DRAM using fully compatible 90nm CMOS technology has been successfully demonstrated. The memory cell design, such as fully-depleted (FD) operation with substrate-bias, and the process integration, such as well and Cu wiring, are reviewed. The scalability and future challenge of FBC technology are discussed as well.
AB - A one-transistor memory cell on silicon-on-insulator, called Floating Body Cell (FBC), has been developed for high density embedded DRAM applications. The functionality of a 128Mb FBC DRAM using fully compatible 90nm CMOS technology has been successfully demonstrated. The memory cell design, such as fully-depleted (FD) operation with substrate-bias, and the process integration, such as well and Cu wiring, are reviewed. The scalability and future challenge of FBC technology are discussed as well.
UR - http://www.scopus.com/inward/record.url?scp=34250346538&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34250346538&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2006.251082
DO - 10.1109/VTSA.2006.251082
M3 - Conference contribution
AN - SCOPUS:34250346538
SN - 142440181X
SN - 9781424401819
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 94
EP - 96
BT - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
T2 - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
Y2 - 24 April 2006 through 26 April 2006
ER -