TY - GEN
T1 - Overview and future challenges of floating Body RAM (FBRAM) technology for 32nm technology node and beyond
AU - Hamamoto, Takeshi
AU - Ohsawa, Takashi
PY - 2008
Y1 - 2008
N2 - Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb Floating Body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single cell (1 Cell/Bit) operation, are reviewed. Based on the experimental results, the scalability of FBC is also discussed.
AB - Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb Floating Body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single cell (1 Cell/Bit) operation, are reviewed. Based on the experimental results, the scalability of FBC is also discussed.
UR - http://www.scopus.com/inward/record.url?scp=58049112663&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=58049112663&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2008.4681692
DO - 10.1109/ESSDERC.2008.4681692
M3 - Conference contribution
AN - SCOPUS:58049112663
SN - 9781424423644
T3 - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
SP - 25
EP - 29
BT - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PB - IEEE Computer Society
T2 - ESSDERC 2008 - 38th European Solid-State Device Research Conference
Y2 - 15 September 2008 through 19 September 2008
ER -