Oxidation on poly silicon at low temperature using UV light-excited ozone gas

Naoto Kameda*, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura


研究成果: Article査読

3 被引用数 (Scopus)


We have grown SiO2 film on the polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, and characterized the electric properties of the SiO2 film at the MIS capacitor configuration. Even at room temperature, the SiO2 of ∼8.5 nm thick can be grown in 60 min. on 1.5 × 1.5 cm2 poly-Si chips. The leakage current density across the SiO2 film was well fitted to the F-N tunnel current over 6 MV/cm and the breakdown occurred at above 12 MV/cm showing that the film properties satisfy the device quality. The oxidation rate of Si by the excited ozone gas did not show difference on between Si(100) and Si (111) wafers. These results indicate that excited ozone gas can form homogenous SiO2 film on the poly-silicon layer with grains with various silicon crystal orientations at the surfaces.

ジャーナルShinku/Journal of the Vacuum Society of Japan
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学


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