Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits

H. Kawarada; K. Ota; Y. Fu; A. Narita; X. Zhu; A. Hiraiwa; T. Fujishima

doi:10.1109/IEDM45741.2023.10413761

Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm²V^-1s^-1 and |V_TH|> 3V Normally-off for Complementary Power Circuits

H. Kawarada^*, K. Ota, Y. Fu, A. Narita, X. Zhu, A. Hiraiwa, T. Fujishima

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Oxidized silicon terminated (C-Si-O) diamond surface has been applied for lateral and vertical MOSFETs. C-Si-O bonds instead of C-O-Si bonds are key to fabricate higher channel mobility of diamond p channel MOSFETs (p-MOSFETs). The hole channel mobility exceeds 150 cm²V^-1s^-1 which is higher than the electron mobility of SiC n-MOSFETs. The threshold voltage V_TH of diamond p-MOSFET is negatively large enough (V_TH < -3V) for normally-off operation at high voltage circuits. Maximum drain current densities I_D,Max were >300 mAmm^-1 in lateral FETs and >200 mAmm^-1 in vertical FETs. They are the highest in normally-off operation of diamond p-FETs.

本文言語	English
ホスト出版物のタイトル	2023 International Electron Devices Meeting, IEDM 2023
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9798350327670
DOI	https://doi.org/10.1109/IEDM45741.2023.10413761
出版ステータス	Published - 2023
イベント	2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States 継続期間: 2023 12月 9 → 2023 12月 13

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Conference

Conference	2023 International Electron Devices Meeting, IEDM 2023
国/地域	United States
City	San Francisco
Period	23/12/9 → 23/12/13

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM45741.2023.10413761

他のファイルとリンク

フィンガープリント

「Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm²V^-1s^-1 and |V_TH|> 3V Normally-off for Complementary Power Circuits」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Kawarada, H., Ota, K., Fu, Y., Narita, A., Zhu, X., Hiraiwa, A., & Fujishima, T. (2023). Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm²V^-1s^-1 and |V_TH|> 3V Normally-off for Complementary Power Circuits. In 2023 International Electron Devices Meeting, IEDM 2023 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45741.2023.10413761

Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm²V^-1s^-1 and |V_TH|> 3V Normally-off for Complementary Power Circuits. / Kawarada, H.; Ota, K.; Fu, Y. その他.
2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: Conference contribution

Kawarada, H, Ota, K, Fu, Y, Narita, A, Zhu, X, Hiraiwa, A & Fujishima, T 2023, Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm²V^-1s^-1 and |V_TH|> 3V Normally-off for Complementary Power Circuits. in 2023 International Electron Devices Meeting, IEDM 2023. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2023 International Electron Devices Meeting, IEDM 2023, San Francisco, United States, 23/12/9. https://doi.org/10.1109/IEDM45741.2023.10413761

Kawarada H, Ota K, Fu Y, Narita A, Zhu X, Hiraiwa A その他. Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm²V^-1s^-1 and |V_TH|> 3V Normally-off for Complementary Power Circuits. In 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45741.2023.10413761

Kawarada, H. ; Ota, K. ; Fu, Y. その他. / Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm²V^-1s^-1 and |V_TH|> 3V Normally-off for Complementary Power Circuits. 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits",

abstract = "Oxidized silicon terminated (C-Si-O) diamond surface has been applied for lateral and vertical MOSFETs. C-Si-O bonds instead of C-O-Si bonds are key to fabricate higher channel mobility of diamond p channel MOSFETs (p-MOSFETs). The hole channel mobility exceeds 150 cm2V-1s-1 which is higher than the electron mobility of SiC n-MOSFETs. The threshold voltage VTH of diamond p-MOSFET is negatively large enough (VTH < -3V) for normally-off operation at high voltage circuits. Maximum drain current densities ID,Max were >300 mAmm-1 in lateral FETs and >200 mAmm-1 in vertical FETs. They are the highest in normally-off operation of diamond p-FETs.",

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AU - Kawarada, H.

AU - Ota, K.

AU - Fu, Y.

AU - Narita, A.

AU - Zhu, X.

AU - Hiraiwa, A.

AU - Fujishima, T.

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AB - Oxidized silicon terminated (C-Si-O) diamond surface has been applied for lateral and vertical MOSFETs. C-Si-O bonds instead of C-O-Si bonds are key to fabricate higher channel mobility of diamond p channel MOSFETs (p-MOSFETs). The hole channel mobility exceeds 150 cm2V-1s-1 which is higher than the electron mobility of SiC n-MOSFETs. The threshold voltage VTH of diamond p-MOSFET is negatively large enough (VTH < -3V) for normally-off operation at high voltage circuits. Maximum drain current densities ID,Max were >300 mAmm-1 in lateral FETs and >200 mAmm-1 in vertical FETs. They are the highest in normally-off operation of diamond p-FETs.

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