Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits

H. Kawarada*, K. Ota, Y. Fu, A. Narita, X. Zhu, A. Hiraiwa, T. Fujishima

*この研究の対応する著者

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Oxidized silicon terminated (C-Si-O) diamond surface has been applied for lateral and vertical MOSFETs. C-Si-O bonds instead of C-O-Si bonds are key to fabricate higher channel mobility of diamond p channel MOSFETs (p-MOSFETs). The hole channel mobility exceeds 150 cm2V-1s-1 which is higher than the electron mobility of SiC n-MOSFETs. The threshold voltage VTH of diamond p-MOSFET is negatively large enough (VTH < -3V) for normally-off operation at high voltage circuits. Maximum drain current densities ID,Max were >300 mAmm-1 in lateral FETs and >200 mAmm-1 in vertical FETs. They are the highest in normally-off operation of diamond p-FETs.

本文言語English
ホスト出版物のタイトル2023 International Electron Devices Meeting, IEDM 2023
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9798350327670
DOI
出版ステータスPublished - 2023
イベント2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States
継続期間: 2023 12月 92023 12月 13

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Conference

Conference2023 International Electron Devices Meeting, IEDM 2023
国/地域United States
CitySan Francisco
Period23/12/923/12/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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