@article{e0e283adb1d9421ca3bbbc17ed2607e5,
title = "Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs",
abstract = "A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V = Vds=50 and a maximum power added efficiency of 51.5% at V =-4 V Vds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.",
keywords = "GaN, High electron mobility transistors (HEMTs), Implantation, Power density, Pulsed I-V, Transient",
author = "Shiu, {Jin Yu} and Huang, {Jui Chien} and Vincent Desmaris and Chang, {Chia Ta} and Lu, {Chung Yu} and Kazuhide Kumakura and Toshiki Makimoto and Herbert Zirath and Niklas Rorsman and Chang, {Edward Yi}",
note = "Funding Information: Manuscript received January 22, 2007; revised April 2, 2007. This work was supported in part by the Ministry of Education, by the Ministry of Economic Affairs, and by the National Science Council of China under Contract NSC 94-2752-E-009-001-PAE and Contract 94-EC-17-A-05-S1-020. The review of this letter was arranged by Editor J. del Alamo.",
year = "2007",
month = jun,
doi = "10.1109/LED.2007.896904",
language = "English",
volume = "28",
pages = "476--478",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}