TY - JOUR
T1 - Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO 3-x-based nanoionics devices
AU - Yang, Rui
AU - Terabe, Kazuya
AU - Tsuruoka, Tohru
AU - Hasegawa, Tsuyoshi
AU - Aono, Masakazu
PY - 2012/6/4
Y1 - 2012/6/4
N2 - Bipolar resistance switching (BRS) behavior and the effects of atmosphere (air, vacuum, O 2 gas, or N 2 gas) on BRS behavior occurred in the top and bottom interfaces in the M (top electrode)/WO 3-x/Pt (bottom electrode) (M Pt, Au) devices were investigated. Stable BRS only can be obtained in the interface with Pt electrode. And, the top Pt/WO 3-x interface exhibited stable BRS only in an oxygen-rich atmosphere (air and O 2 gas). In contrast, the bottom WO 3-x/Pt interface showed stable BRS under any atmosphere. Based on the x-ray photoelectron spectroscopy measurement on Pt, Au/WO 3-x interfaces, it is identified that the oxygen migration process during resistance switching mainly occurs between the Pt/WO 3-x interface and Pt electrode.
AB - Bipolar resistance switching (BRS) behavior and the effects of atmosphere (air, vacuum, O 2 gas, or N 2 gas) on BRS behavior occurred in the top and bottom interfaces in the M (top electrode)/WO 3-x/Pt (bottom electrode) (M Pt, Au) devices were investigated. Stable BRS only can be obtained in the interface with Pt electrode. And, the top Pt/WO 3-x interface exhibited stable BRS only in an oxygen-rich atmosphere (air and O 2 gas). In contrast, the bottom WO 3-x/Pt interface showed stable BRS under any atmosphere. Based on the x-ray photoelectron spectroscopy measurement on Pt, Au/WO 3-x interfaces, it is identified that the oxygen migration process during resistance switching mainly occurs between the Pt/WO 3-x interface and Pt electrode.
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U2 - 10.1063/1.4726084
DO - 10.1063/1.4726084
M3 - Article
AN - SCOPUS:84862138489
SN - 0003-6951
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 231603
ER -