Ozone cleaning of carbon-related contaminants on Si wafers and other substrate materials

H. Nonaka*, A. Kurokawa, S. Ichimura, D. W. Moon

*この研究の対応する著者

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

We have investigated a novel surface cleaning technique of native oxide on Si wafer, in which carbon-related contaminants are removed effectively at room temperature with a pure ozone beam from an ozone jet generator that we developed. Although ozone alone was likely to be little reactive to saturated carbons and byproducts in the reaction of ozone with unsaturated carbons which could be assigned to either carbonyl- or carboxyl-related compounds, a high-dose pure ozone under ultraviolet light irradiation to generate atomic oxygen by the photo-dissociation of ozone removed most of them at room temperature. The effectiveness of the ozone cleaning was also demonstrated for selected oxide surfaces.

本文言語English
ページ(範囲)493-498
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
477
出版ステータスPublished - 1997 1月 1
外部発表はい
イベントProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
継続期間: 1997 3月 311997 4月 3

ASJC Scopus subject areas

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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