We have investigated a novel surface cleaning technique of native oxide on Si wafer, in which carbon-related contaminants are removed effectively at room temperature with a pure ozone beam from an ozone jet generator that we developed. Although ozone alone was likely to be little reactive to saturated carbons and byproducts in the reaction of ozone with unsaturated carbons which could be assigned to either carbonyl- or carboxyl-related compounds, a high-dose pure ozone under ultraviolet light irradiation to generate atomic oxygen by the photo-dissociation of ozone removed most of them at room temperature. The effectiveness of the ozone cleaning was also demonstrated for selected oxide surfaces.
|Materials Research Society Symposium - Proceedings
|Published - 1997 1月 1
|Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
継続期間: 1997 3月 31 → 1997 4月 3
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