P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications
Atsushi Nishikawa*, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
*この研究の対応する著者
研究成果: Article › 査読
3
被引用数
(Scopus)