TY - JOUR
T1 - P-type polymer-based Ag2S atomic switch for "tug of war" operation
AU - Lutz, Carolin
AU - Hasegawa, Tsuyoshi
AU - Tsuchiya, Takashi
AU - Adelsberger, Christoph
AU - Hayakawa, Ryoma
AU - Chikyow, Toyohiro
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/6
Y1 - 2017/6
N2 - The Ag2S gap-type atomic switch based "tug of war" device is a promising element for building a new type of CMOS free neuromorphic computerhardware. Since Ag+ cations are reduced during operation of the device, it was thought that the gap-material should be a n-type polymer. In this study, we revealed that the polymer bithiophene-oligoethyleneoxide (BTOE) doped poly(ethylene oxide) (PEO), which was used as gap-material in the first demonstration of the "tug of war", is a p-type polymer. For this we used impedance spectroscopy and transistor measurements. We elaborate on how the electrochemical processes in the "tug of war" devices could be explained in the case of p-type conductive gap-materials.
AB - The Ag2S gap-type atomic switch based "tug of war" device is a promising element for building a new type of CMOS free neuromorphic computerhardware. Since Ag+ cations are reduced during operation of the device, it was thought that the gap-material should be a n-type polymer. In this study, we revealed that the polymer bithiophene-oligoethyleneoxide (BTOE) doped poly(ethylene oxide) (PEO), which was used as gap-material in the first demonstration of the "tug of war", is a p-type polymer. For this we used impedance spectroscopy and transistor measurements. We elaborate on how the electrochemical processes in the "tug of war" devices could be explained in the case of p-type conductive gap-materials.
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U2 - 10.7567/JJAP.56.06GF03
DO - 10.7567/JJAP.56.06GF03
M3 - Article
AN - SCOPUS:85020515663
SN - 0021-4922
VL - 56
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 6
M1 - 06GF03
ER -