PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM.

H. Shinohara^*, K. Anami, M. Yoshimoto, Y. Hirata, T. Nakano

^*この研究の対応する著者

研究成果: Conference article › 査読

本文言語	English
ページ（範囲）	106-107
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 1982
外部発表	はい

ASJC Scopus subject areas

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title = "PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM.",

author = "H. Shinohara and K. Anami and M. Yoshimoto and Y. Hirata and T. Nakano",

year = "1982",

language = "English",

pages = "106--107",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM.

AU - Shinohara, H.

AU - Anami, K.

AU - Yoshimoto, M.

AU - Hirata, Y.

AU - Nakano, T.

PY - 1982

Y1 - 1982

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M3 - Conference article

AN - SCOPUS:0020240421

SN - 0743-1562

SP - 106

EP - 107

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

ER -