Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

J. I. Hwang; Y. Ishida; M. Kobayashi; Y. Osafune; T. Mizokawa; A. Fujimori; Y. Takeda; K. Terai; S. I. Fujimori; Y. Saitoh; Y. Muramatsu; A. Tanaka; T. Kondo; H. Munekata; M. Hashimoto; H. Tanaka; S. Hasegawa; H. Asahi

doi:10.1002/pssb.200565329

Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

J. I. Hwang^*, Y. Ishida, M. Kobayashi, Y. Osafune, T. Mizokawa, A. Fujimori, Y. Takeda, K. Terai, S. I. Fujimori, Y. Saitoh, Y. Muramatsu, A. Tanaka, T. Kondo, H. Munekata, M. Hashimoto, H. Tanaka, S. Hasegawa, H. Asahi

^*この研究の対応する著者

研究成果: Article › 査読

6 被引用数 (Scopus)

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We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga_1-xCr_xN and Ga_1-xMn_xN.

本文言語	English
ページ（範囲）	1696-1700
ページ数	5
ジャーナル	Physica Status Solidi (B) Basic Research
巻	243
号	7
DOI	https://doi.org/10.1002/pssb.200565329
出版ステータス	Published - 2006 6月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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10.1002/pssb.200565329

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Hwang, J. I., Ishida, Y., Kobayashi, M., Osafune, Y., Mizokawa, T., Fujimori, A., Takeda, Y., Terai, K., Fujimori, S. I., Saitoh, Y., Muramatsu, Y., Tanaka, A., Kondo, T., Munekata, H., Hashimoto, M., Tanaka, H., Hasegawa, S., & Asahi, H. (2006). Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors. Physica Status Solidi (B) Basic Research, 243(7), 1696-1700. https://doi.org/10.1002/pssb.200565329

Hwang, JI, Ishida, Y, Kobayashi, M, Osafune, Y, Mizokawa, T, Fujimori, A, Takeda, Y, Terai, K, Fujimori, SI, Saitoh, Y, Muramatsu, Y, Tanaka, A, Kondo, T, Munekata, H, Hashimoto, M, Tanaka, H, Hasegawa, S & Asahi, H 2006, 'Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors', Physica Status Solidi (B) Basic Research, vol. 243, no. 7, pp. 1696-1700. https://doi.org/10.1002/pssb.200565329

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title = "Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors",

abstract = "We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.",

author = "Hwang, {J. I.} and Y. Ishida and M. Kobayashi and Y. Osafune and T. Mizokawa and A. Fujimori and Y. Takeda and K. Terai and Fujimori, {S. I.} and Y. Saitoh and Y. Muramatsu and A. Tanaka and T. Kondo and H. Munekata and M. Hashimoto and H. Tanaka and S. Hasegawa and H. Asahi",

year = "2006",

month = jun,

doi = "10.1002/pssb.200565329",

language = "English",

volume = "243",

pages = "1696--1700",

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T1 - Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

AU - Hwang, J. I.

AU - Ishida, Y.

AU - Kobayashi, M.

AU - Osafune, Y.

AU - Mizokawa, T.

AU - Fujimori, A.

AU - Takeda, Y.

AU - Terai, K.

AU - Fujimori, S. I.

AU - Saitoh, Y.

AU - Muramatsu, Y.

AU - Tanaka, A.

AU - Kondo, T.

AU - Munekata, H.

AU - Hashimoto, M.

AU - Tanaka, H.

AU - Hasegawa, S.

AU - Asahi, H.

PY - 2006/6

Y1 - 2006/6

N2 - We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.

AB - We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.

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Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

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