Photoemission study of the SiO2 /Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces

Michio Niwano; Hitoshi Katakura; Yuki Takeda; Yuji Takakuwa; Nobuo Miyamoto; Atsushi Hiraiwa; Kunihiro Yaqi

doi:10.1116/1.577520

Photoemission study of the SiO₂ /Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces

Michio Niwano, Hitoshi Katakura, Yuki Takeda, Yuji Takakuwa, Nobuo Miyamoto, Atsushi Hiraiwa, Kunihiro Yaqi

研究成果: Article › 査読

本文言語	English
ページ（範囲）	195-200
ページ数	6
ジャーナル	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
巻	9
号	2
DOI	https://doi.org/10.1116/1.577520
出版ステータス	Published - 1991 3月 1
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜

文献へのアクセス

10.1116/1.577520

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引用スタイル

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