Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

Takashi Noma; Kwang Soo Seol; Makoto Fujimaki; Hiromitsu Kato; Takashi Watanabe; Yoshimichi Ohki

doi:10.1143/jjap.39.6587

Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

Takashi Noma^*, Kwang Soo Seol, Makoto Fujimaki, Hiromitsu Kato, Takashi Watanabe, Yoshimichi Ohki

^*この研究の対応する著者

各務記念材料技術研究所

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO₂ were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiN_x was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

本文言語	English
ページ（範囲）	6587-6593
ページ数	7
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	39
号	12 A
DOI	https://doi.org/10.1143/jjap.39.6587
出版ステータス	Published - 2000 12月 1

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.39.6587

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title = "Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films",

abstract = "Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.",

keywords = "Luminescence, PECVD, Photoluminescence, Silicon nitride, Silicon oxide, Silicon oxynitride",

author = "Takashi Noma and Seol, {Kwang Soo} and Makoto Fujimaki and Hiromitsu Kato and Takashi Watanabe and Yoshimichi Ohki",

year = "2000",

month = dec,

day = "1",

doi = "10.1143/jjap.39.6587",

language = "English",

volume = "39",

pages = "6587--6593",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

AU - Noma, Takashi

AU - Seol, Kwang Soo

AU - Fujimaki, Makoto

AU - Kato, Hiromitsu

AU - Watanabe, Takashi

AU - Ohki, Yoshimichi

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

AB - Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

KW - Luminescence

KW - PECVD

KW - Photoluminescence

KW - Silicon nitride

KW - Silicon oxide

KW - Silicon oxynitride

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 12 A

ER -

Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

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