Photoluminescence of oxygen-deficient-type defects in a-SiO2

N. Nishikawa*, Y. Miyake, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki, K. Ishii, Y. Sakurai, K. Nagasawa


研究成果: Conference article査読

37 被引用数 (Scopus)


Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at approximately 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).

ジャーナルJournal of Non-Crystalline Solids
出版ステータスPublished - 1997 12月 2
イベントProceedings of the 1997 14th University Conference on Glass Science - Bethlehem, PA, USA
継続期間: 1997 6月 171997 6月 20

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 材料化学


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