TY - JOUR
T1 - Photoluminescence of oxygen-deficient-type defects in a-SiO2
AU - Nishikawa, N.
AU - Miyake, Y.
AU - Watanabe, E.
AU - Ito, D.
AU - Seol, K. S.
AU - Ohki, Y.
AU - Ishii, K.
AU - Sakurai, Y.
AU - Nagasawa, K.
PY - 1997/12/2
Y1 - 1997/12/2
N2 - Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at approximately 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).
AB - Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at approximately 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).
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U2 - 10.1016/S0022-3093(97)00398-0
DO - 10.1016/S0022-3093(97)00398-0
M3 - Conference article
AN - SCOPUS:0031550078
SN - 0022-3093
VL - 222
SP - 221
EP - 227
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
T2 - Proceedings of the 1997 14th University Conference on Glass Science
Y2 - 17 June 1997 through 20 June 1997
ER -