TY - JOUR
T1 - Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers
AU - Hiratsuka, Shingo
AU - Saravanan, Shanugam
AU - Harayama, Takahisa
AU - Ohtani, Naoki
PY - 2009
Y1 - 2009
N2 - We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.
AB - We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.
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U2 - 10.1002/pssc.200879827
DO - 10.1002/pssc.200879827
M3 - Conference article
AN - SCOPUS:63449120363
SN - 1862-6351
VL - 6
SP - 189
EP - 192
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 1
T2 - 8th International Conference on Excitonic Processes in Condensed Matter, EXCON'08
Y2 - 22 June 2008 through 27 June 2008
ER -