Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio; Hiromitsu Kato; Yoshimichi Ohki; Kwang Soo Seol; Takashi Noma

Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio^*, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

^*この研究の対応する著者

先進理工学部

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

The photoluminescence (PL) in silicon-rich a-SiN_x:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiN_x:H films.

本文言語	English
ページ	79-82
ページ数	4
出版ステータス	Published - 2001 12月 1
イベント	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan 継続期間: 2001 11月 19 → 2001 11月 22

Conference

Conference	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
国/地域	Japan
City	Himeji
Period	01/11/19 → 01/11/22

ASJC Scopus subject areas

工学（全般）
材料科学（全般）

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引用スタイル

Kashio, N., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Photoluminescence properties of hydrogenated amorphous silicon nitride. 79-82. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Photoluminescence properties of hydrogenated amorphous silicon nitride. / Kashio, Norihide; Kato, Hiromitsu; Ohki, Yoshimichi その他.
2001. 79-82 Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

研究成果: Paper › 査読

Kashio, N, Kato, H, Ohki, Y, Seol, KS & Noma, T 2001, 'Photoluminescence properties of hydrogenated amorphous silicon nitride', Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan, 01/11/19 - 01/11/22 pp. 79-82.

Kashio N, Kato H, Ohki Y, Seol KS, Noma T. Photoluminescence properties of hydrogenated amorphous silicon nitride. 2001. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Kashio, Norihide ; Kato, Hiromitsu ; Ohki, Yoshimichi その他. / Photoluminescence properties of hydrogenated amorphous silicon nitride. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.4 p.

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abstract = "The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.",

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AU - Kato, Hiromitsu

AU - Ohki, Yoshimichi

AU - Seol, Kwang Soo

AU - Noma, Takashi

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

AB - The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

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T2 - Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems

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Photoluminescence properties of hydrogenated amorphous silicon nitride

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