Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy

S. F. Chichibu; A. Tsukazaki; M. Kawasaki; K. Tamura; Y. Segawa; T. Sota; H. Koinuma

doi:10.1063/1.1471374

Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO₄ (0001) substrate grown by laser molecular-beam epitaxy

S. F. Chichibu, A. Tsukazaki, M. Kawasaki, K. Tamura, Y. Segawa, T. Sota, H. Koinuma

研究成果: Article › 査読

62 被引用数 (Scopus)

抄録

Photoreflectance spectra of a high-quality ZnO epilayer on the ScAlMgO ₄ (0001) substrate grown by laser molecular-beam epitaxy exhibited clear excitonic resonances due to three excitons associated with uppermost valence bands (A, B, and C excitons). The oscillator strengths of the B and C excitons are larger than that of the A exciton. Their broadening was interpreted to be due to the contribution by exciton-polaritons in terms of large longitudinal-transverse splitting of respective excitons. Dependence of the exciton energy on temperature was well fitted assuming the Bose-Einstein statistics giving the Einstein characteristic temperature _E of 380 K (33 meV).

本文言語	English
ページ（範囲）	2860-2862
ページ数	3
ジャーナル	Applied Physics Letters
巻	80
号	16
DOI	https://doi.org/10.1063/1.1471374
出版ステータス	Published - 2002 4月 22
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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abstract = "Photoreflectance spectra of a high-quality ZnO epilayer on the ScAlMgO 4 (0001) substrate grown by laser molecular-beam epitaxy exhibited clear excitonic resonances due to three excitons associated with uppermost valence bands (A, B, and C excitons). The oscillator strengths of the B and C excitons are larger than that of the A exciton. Their broadening was interpreted to be due to the contribution by exciton-polaritons in terms of large longitudinal-transverse splitting of respective excitons. Dependence of the exciton energy on temperature was well fitted assuming the Bose-Einstein statistics giving the Einstein characteristic temperature E of 380 K (33 meV).",

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AU - Kawasaki, M.

AU - Tamura, K.

AU - Segawa, Y.

AU - Sota, T.

AU - Koinuma, H.

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AB - Photoreflectance spectra of a high-quality ZnO epilayer on the ScAlMgO 4 (0001) substrate grown by laser molecular-beam epitaxy exhibited clear excitonic resonances due to three excitons associated with uppermost valence bands (A, B, and C excitons). The oscillator strengths of the B and C excitons are larger than that of the A exciton. Their broadening was interpreted to be due to the contribution by exciton-polaritons in terms of large longitudinal-transverse splitting of respective excitons. Dependence of the exciton energy on temperature was well fitted assuming the Bose-Einstein statistics giving the Einstein characteristic temperature E of 380 K (33 meV).

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