抄録
We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the “state-lifetime”, that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L750-L753 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 28 |
| 号 | 5A |
| DOI | |
| 出版ステータス | Published - 1989 5月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）