Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto; Atsushi Tackeuchi; Tsuguo Inata; Eizo Miyauchi; Toshio Fujii

doi:10.1016/0039-6028(90)90330-B

Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto^*, Atsushi Tackeuchi, Tsuguo Inata, Eizo Miyauchi, Toshio Fujii

^*この研究の対応する著者

研究成果: Article › 査読

抄録

We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 10⁵A/cm².

本文言語	English
ページ（範囲）	370-372
ページ数	3
ジャーナル	Surface Science
巻	228
号	1-3
DOI	https://doi.org/10.1016/0039-6028(90)90330-B
出版ステータス	Published - 1990 4月 1
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/0039-6028(90)90330-B

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abstract = "We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.",

author = "Shunichi Muto and Atsushi Tackeuchi and Tsuguo Inata and Eizo Miyauchi and Toshio Fujii",

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AU - Muto, Shunichi

AU - Tackeuchi, Atsushi

AU - Inata, Tsuguo

AU - Miyauchi, Eizo

AU - Fujii, Toshio

PY - 1990/4/1

Y1 - 1990/4/1

N2 - We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.

AB - We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.

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JO - Surface Science

JF - Surface Science

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Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

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