The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e-1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.
|ジャーナル||Physica B: Condensed Matter|
|出版ステータス||Published - 1999 12月 1|
|イベント||Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn|
継続期間: 1999 7月 19 → 1999 7月 23
ASJC Scopus subject areas