TY - JOUR
T1 - Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN
AU - Tackeuchi, A.
AU - Otake, H.
AU - Fujita, T.
AU - Kuroda, T.
AU - Chinone, T.
AU - Liang, J. H.
AU - Kajikawa, M.
PY - 2006
Y1 - 2006
N2 - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T-0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process.
AB - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T-0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process.
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U2 - 10.1002/pssc.200672885
DO - 10.1002/pssc.200672885
M3 - Conference article
AN - SCOPUS:49549125666
SN - 1862-6351
VL - 3
SP - 4303
EP - 4306
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 12
T2 - 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV
Y2 - 15 August 2006 through 18 August 2006
ER -