We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2007 4月 24|
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