@article{dc2dcf010ce44220b0747003a7a50eaf,
title = "Polycrystalline Boron-doped Diamond Electrolyte-solution-gate Field-effect Transistor Applied to the Measurement of Water Percentage in Ethanol",
abstract = "A polycrystalline diamond electrolyte-solution-gate field-effect transistor (BDD-SGFET) was successfully applied to the analysis of water content in ethanol. Due to the use of a no-gate-insulator FET, the developed sensor showed a fourtimes- faster response than the conventional Si-FET, and a ten-times-faster response than a glass electrode. The output voltage showed good linearity with respect to the water content. This result is of practical importance because the traditional water content measurement methods are impractical due to their slow response.",
keywords = "Electrolyte-solution-gate field-effect transistor, boron-doped diamond, ethanol, polycrystalline, water percentage",
author = "Yukihiro Shintani and Hiroshi Kawarada",
note = "Funding Information: This study was supported by Japan Science and Technology Agency (Adaptable and Seamless Technology Transfer Program through Target-driven R&D). We appreciate the Institute for Nanoscience and Nanotechnology in Waseda University for the use of their equipment. Publisher Copyright: {\textcopyright} 2017, The Japan Society for Analytical Chemistry.",
year = "2017",
month = oct,
doi = "10.2116/analsci.33.1193",
language = "English",
volume = "33",
pages = "1193--1196",
journal = "Analytical Sciences",
issn = "0910-6340",
publisher = "Japan Society for Analytical Chemistry",
number = "10",
}