Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti0.5)O Buffer Layer

Ye Du; T. Furubayashi; Y. K. Takahashi; Y. Sakuraba; K. Hono

doi:10.1109/TMAG.2015.2442592

Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co₂Fe(Ga_0.5Ge_0.5) Layer Grown on a Conductive (Mg_0.5Ti_0.5)O Buffer Layer

Ye Du^*, T. Furubayashi, Y. K. Takahashi, Y. Sakuraba, K. Hono

^*この研究の対応する著者

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co₂Fe(Ga_0.5Ge_0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg_0.5Ti_0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.

本文言語	English
論文番号	7119594
ジャーナル	IEEE Transactions on Magnetics
巻	51
号	11
DOI	https://doi.org/10.1109/TMAG.2015.2442592
出版ステータス	Published - 2015 11月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/TMAG.2015.2442592

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「Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co₂Fe(Ga_0.5Ge_0.5) Layer Grown on a Conductive (Mg_0.5Ti_0.5)O Buffer Layer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

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title = "Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti0.5)O Buffer Layer",

abstract = "We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.",

keywords = "CPP-GMR, Heusler alloy, polycrystals, read head sensors",

author = "Ye Du and T. Furubayashi and Takahashi, {Y. K.} and Y. Sakuraba and K. Hono",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

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AU - Du, Ye

AU - Furubayashi, T.

AU - Takahashi, Y. K.

AU - Sakuraba, Y.

AU - Hono, K.

PY - 2015/11/1

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N2 - We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.

AB - We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.

KW - CPP-GMR

KW - Heusler alloy

KW - polycrystals

KW - read head sensors

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