Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

Taro Yamada; Nao Takano; Keiko Yamada; Shuhei Yoshitomi; Tomoyuki Inoue; Tetsuya Osaka

doi:10.1109/NANO.2001.966456

Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

Taro Yamada^*, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue, Tetsuya Osaka

^*この研究の対応する著者

ナノ・ライフ創新研究機構

研究成果: Conference contribution

抄録

A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (C_nH_2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni²⁺ or Cu²⁺ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

本文言語	English
ホスト出版物のタイトル	Proceedings of the IEEE Conference on Nanotechnology
出版社	IEEE Computer Society
ページ	403-408
ページ数	6
巻	2001-January
ISBN（印刷版）	0780372158
DOI	https://doi.org/10.1109/NANO.2001.966456
出版ステータス	Published - 2001
イベント	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States 継続期間: 2001 10月 28 → 2001 10月 30

Other

Other	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
国/地域	United States
City	Maui
Period	01/10/28 → 01/10/30

ASJC Scopus subject areas

バイオエンジニアリング
電子工学および電気工学
材料化学
凝縮系物理学

文献へのアクセス

10.1109/NANO.2001.966456

他のファイルとリンク

引用スタイル

Yamada, T, Takano, N, Yamada, K, Yoshitomi, S, Inoue, T & Osaka, T 2001, Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers. in Proceedings of the IEEE Conference on Nanotechnology. vol. 2001-January, 966456, IEEE Computer Society, pp. 403-408, 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001, Maui, United States, 01/10/28. https://doi.org/10.1109/NANO.2001.966456

@inproceedings{539dc8192c3d43dda29774583ebdb07e,

title = "Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers",

abstract = "A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.",

author = "Taro Yamada and Nao Takano and Keiko Yamada and Shuhei Yoshitomi and Tomoyuki Inoue and Tetsuya Osaka",

year = "2001",

doi = "10.1109/NANO.2001.966456",

language = "English",

isbn = "0780372158",

volume = "2001-January",

pages = "403--408",

booktitle = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

note = "1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 ; Conference date: 28-10-2001 Through 30-10-2001",

}

TY - GEN

T1 - Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

AU - Yamada, Taro

AU - Takano, Nao

AU - Yamada, Keiko

AU - Yoshitomi, Shuhei

AU - Inoue, Tomoyuki

AU - Osaka, Tetsuya

PY - 2001

Y1 - 2001

N2 - A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

AB - A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84949235835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949235835&partnerID=8YFLogxK

U2 - 10.1109/NANO.2001.966456

DO - 10.1109/NANO.2001.966456

M3 - Conference contribution

AN - SCOPUS:84949235835

SN - 0780372158

VL - 2001-January

SP - 403

EP - 408

BT - Proceedings of the IEEE Conference on Nanotechnology

PB - IEEE Computer Society

T2 - 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001

Y2 - 28 October 2001 through 30 October 2001

ER -

Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

抄録

Other

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル