Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.

Shoma Kuga; Shinya Tajima; Jung Hoon Yang; Kazuyuki Hirama; Hiroshi Kawarada

doi:10.1109/IEDM.2008.4796731

Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.

Shoma Kuga^*, Shinya Tajima, Jung Hoon Yang, Kazuyuki Hirama, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.

本文言語	English
ホスト出版物のタイトル	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOI	https://doi.org/10.1109/IEDM.2008.4796731
出版ステータス	Published - 2008 12月 1
イベント	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States 継続期間: 2008 12月 15 → 2008 12月 17

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
国/地域	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2008.4796731

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引用スタイル

Kuga, S, Tajima, S, Yang, JH, Hirama, K & Kawarada, H 2008, Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796731, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796731

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title = "Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.",

abstract = "The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.",

author = "Shoma Kuga and Shinya Tajima and Yang, {Jung Hoon} and Kazuyuki Hirama and Hiroshi Kawarada",

year = "2008",

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doi = "10.1109/IEDM.2008.4796731",

language = "English",

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series = "Technical Digest - International Electron Devices Meeting, IEDM",

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T1 - Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.

AU - Kuga, Shoma

AU - Tajima, Shinya

AU - Yang, Jung Hoon

AU - Hirama, Kazuyuki

AU - Kawarada, Hiroshi

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.

AB - The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.

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BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.

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Conference

ASJC Scopus subject areas

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