Preparation and Optical Nonlinear Property of Sol–Gel‐Derived Cu─SiO2 Thin Films

Debtosh Kundu; Itaru Honma; Toshio Ohsawa; Hiroshi Komiyama

doi:10.1111/j.1151-2916.1994.tb07282.x

Preparation and Optical Nonlinear Property of Sol–Gel‐Derived Cu─SiO₂ Thin Films

Debtosh Kundu^*, Itaru Honma, Toshio Ohsawa, Hiroshi Komiyama

^*この研究の対応する著者

研究成果: Article › 査読

37 被引用数 (Scopus)

抄録

Cu‐metal‐doped glass films having a Cu:Si atomic ratio of 0.05 ± 0.002 were successfully prepared by a sol‐gel method using a dipping technique. The appearance of surface plasmon of Cu metal at about 570 nm was observed after heat treatment at or above 700°C. The third‐order nonlinear susceptibility (x³) was as high as 5.0 × 10^–8 esu at 570 nm.

本文言語	English
ページ（範囲）	1110-1112
ページ数	3
ジャーナル	Journal of the American Ceramic Society
巻	77
号	4
DOI	https://doi.org/10.1111/j.1151-2916.1994.tb07282.x
出版ステータス	Published - 1994
外部発表	はい

ASJC Scopus subject areas

セラミックおよび複合材料
材料化学

文献へのアクセス

10.1111/j.1151-2916.1994.tb07282.x

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引用スタイル

@article{badd8b805428499eaff7e15588bf0eae,

title = "Preparation and Optical Nonlinear Property of Sol–Gel‐Derived Cu─SiO2 Thin Films",

abstract = "Cu‐metal‐doped glass films having a Cu:Si atomic ratio of 0.05 ± 0.002 were successfully prepared by a sol‐gel method using a dipping technique. The appearance of surface plasmon of Cu metal at about 570 nm was observed after heat treatment at or above 700°C. The third‐order nonlinear susceptibility (x3) was as high as 5.0 × 10–8 esu at 570 nm.",

author = "Debtosh Kundu and Itaru Honma and Toshio Ohsawa and Hiroshi Komiyama",

year = "1994",

doi = "10.1111/j.1151-2916.1994.tb07282.x",

language = "English",

volume = "77",

pages = "1110--1112",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "4",

}

TY - JOUR

T1 - Preparation and Optical Nonlinear Property of Sol–Gel‐Derived Cu─SiO2 Thin Films

AU - Kundu, Debtosh

AU - Honma, Itaru

AU - Ohsawa, Toshio

AU - Komiyama, Hiroshi

PY - 1994

Y1 - 1994

N2 - Cu‐metal‐doped glass films having a Cu:Si atomic ratio of 0.05 ± 0.002 were successfully prepared by a sol‐gel method using a dipping technique. The appearance of surface plasmon of Cu metal at about 570 nm was observed after heat treatment at or above 700°C. The third‐order nonlinear susceptibility (x3) was as high as 5.0 × 10–8 esu at 570 nm.

AB - Cu‐metal‐doped glass films having a Cu:Si atomic ratio of 0.05 ± 0.002 were successfully prepared by a sol‐gel method using a dipping technique. The appearance of surface plasmon of Cu metal at about 570 nm was observed after heat treatment at or above 700°C. The third‐order nonlinear susceptibility (x3) was as high as 5.0 × 10–8 esu at 570 nm.

UR - http://www.scopus.com/inward/record.url?scp=0028422429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028422429&partnerID=8YFLogxK

U2 - 10.1111/j.1151-2916.1994.tb07282.x

DO - 10.1111/j.1151-2916.1994.tb07282.x

M3 - Article

AN - SCOPUS:0028422429

SN - 0002-7820

VL - 77

SP - 1110

EP - 1112

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 4

ER -