Preparation of BixSb2-xTe3 thermoelectric thin films by electrodeposition from basic solutions

Yuki Suzuki*, Ziliang Chen, Akio Fuwa


    研究成果: Article査読

    3 被引用数 (Scopus)


    Bismuth antimony telluride BixSb2-xTe3 thermoelectric thin films were prepared by electrodeposition from alkaline solution adjusted to pH=9.0 in order to inhibit hydrogen from generating. NTA (nitrile-tri-acetic acid: C6H9NO5) was used so as to increase solubility of bismuth in the alkaline solution. Electrochemical behaviors of Bi (III), Te(W), Sb( III) and their mixtures were firstly investigated by LSV (linear sweep voltammetry) for elucidation of electrochemical condition of diffusion controlled deposition. Then, BixSb2-xTe3 electrochemical deposition experiments were conducted from the mixed solution under potential of diffusion controlled condition, i.e. -0.7 V, -0.8 V, and -0.9 V, where [Bi]/[Sb] ratio in solution was varied from 0 to 13 while keeping [Bi] + [Sb] =2 mmol/L, [Tel = 1.6 mmol/L, ENTA] = 0.1 mol/L and 333 K using rubber heater. Thermoelectric power properties such as semiconductor type, electric conductivity, Seebeck factor and power factor were measured and evaluated for the BixSb2-xTe3. The experiment results revealed are as follows: (1) BixSb2-xTe3 thin films can be obtained by electrochemical deposition at electric potential (-0.7-1.0 V) under limiting current density from alkaline solution including NTA, (2) composition of films can be controlled by the mixed solution composition as well as imposed electric potential, (3) the (015) crystalline face orientation becomes stronger when absolute value of imposed potential becomes smaller, and (4) n-type semiconducting thermoelectric thin films can be prepared when x is smaller than 0.6, and p-type thin films can be prepared when x is larger than 0.6.

    ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    出版ステータスPublished - 2014 8月 1

    ASJC Scopus subject areas

    • 材料力学
    • 材料化学
    • 金属および合金
    • 凝縮系物理学


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