TY - GEN
T1 - Process parameter calibration for millimeter-wave CMOS back-end device design with electromagnetic field analysis
AU - Amakawa, S.
AU - Orii, A.
AU - Katayama, K.
AU - Takano, K.
AU - Motoyoshi, M.
AU - Yoshida, T.
AU - Fujishima, M.
PY - 2014
Y1 - 2014
N2 - This paper presents a systematic procedure for calibrating process parameters for electromagnetic field analysis. A few CMOS back-end material parameters are first chosen as fitting parameters by sensitivity analysis, and then their values are unambiguously determined from contour maps showing electrical characteristics versus effective material parameters. Calibration with measured data for 1-170 GHz is shown to give reasonably predictive simulation even at higher frequencies. Extraction of effective complex permittivities are also attempted up to 325 GHz in the presence of dummy metal fills for two filling patterns. The results indicate that the effective-parameter approach to dummy metal fills can reproduce measured propagation constants of transmission lines. The predictive power of such a simple approach is yet to be assessed.
AB - This paper presents a systematic procedure for calibrating process parameters for electromagnetic field analysis. A few CMOS back-end material parameters are first chosen as fitting parameters by sensitivity analysis, and then their values are unambiguously determined from contour maps showing electrical characteristics versus effective material parameters. Calibration with measured data for 1-170 GHz is shown to give reasonably predictive simulation even at higher frequencies. Extraction of effective complex permittivities are also attempted up to 325 GHz in the presence of dummy metal fills for two filling patterns. The results indicate that the effective-parameter approach to dummy metal fills can reproduce measured propagation constants of transmission lines. The predictive power of such a simple approach is yet to be assessed.
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U2 - 10.1109/ICMTS.2014.6841490
DO - 10.1109/ICMTS.2014.6841490
M3 - Conference contribution
AN - SCOPUS:84904159662
SN - 9781479921928
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 182
EP - 187
BT - 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th International Conference on Microelectronic Test Structures, ICMTS 2014
Y2 - 24 March 2014 through 27 March 2014
ER -