TY - JOUR
T1 - Properties of (111) diamond homoepitaxial layer and its application to field-effect transistor
AU - Kasu, Makoto
AU - Kubovic, Michal
AU - Aleksov, Aleksandar
AU - Teofilov, Nikolai
AU - Sauer, Rolf
AU - Kohn, Erhard
AU - Makimoto, Toshiki
PY - 2004/7/15
Y1 - 2004/7/15
N2 - The (111)-oriented chemical-vapor-deposited diamond homoepitaxial layers with low defect density exhibited well-resolved free-exciton transitions in cathodoluminescence at 13 K and a sharp peak at 1332 cm -1 (linewidth: 1.9 cm -1) in Raman scattering. Furthermore, using these (111) layers, we fabricated metal-semiconductor field-effect transistors (FETs). FETs with an 11-μm-long gate exhibited a maximum drain current of 24 mA/mm and maximum transconductance of 14 mS/mm. These values are of the same order as those for the (001) orientation.
AB - The (111)-oriented chemical-vapor-deposited diamond homoepitaxial layers with low defect density exhibited well-resolved free-exciton transitions in cathodoluminescence at 13 K and a sharp peak at 1332 cm -1 (linewidth: 1.9 cm -1) in Raman scattering. Furthermore, using these (111) layers, we fabricated metal-semiconductor field-effect transistors (FETs). FETs with an 11-μm-long gate exhibited a maximum drain current of 24 mA/mm and maximum transconductance of 14 mS/mm. These values are of the same order as those for the (001) orientation.
KW - Cathodoluminescence
KW - Chemical vapor deposition
KW - Diamond
KW - Field-effect transistor
KW - Hydrogen termination
KW - Raman scattering
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U2 - 10.1143/JJAP.43.L975
DO - 10.1143/JJAP.43.L975
M3 - Article
AN - SCOPUS:4644309227
SN - 0021-4922
VL - 43
SP - L975-L977
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 7 B
ER -