We propose novel InGaAsP/InP semiconductor photonic switches using multi-mode interference (MIPS). Switching functions are controlled by changing the refractive indices of the index-modulated regions which are located at the center of the multi-mode waveguide. It is predicted from the calculations by FD-TD (finite difference time domain) method that these devices can operate in various kinds of output schemes, with device sizes of about 8μm wide and 540μm long. The characteristics can be improved by optimizing cladding index and/or index-modulated region's width. Actually we fabricated the InGaAsP/InP MIPS with partial current injection regions, and at present preliminary transmission property with no index change was observed.
|ジャーナル||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|出版ステータス||Published - 1998 12月 1|
|イベント||Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn|
継続期間: 1998 5月 11 → 1998 5月 15
ASJC Scopus subject areas