TY - JOUR
T1 - Prototype of the Stacked CdZnTe Semiconductor Detector for 16N Measurement
AU - Hiroshi, Nishizawa
AU - Hiroshi, Inujima
AU - Hirotsugu, Fujiwara
AU - Hiroaki, Nakamura
PY - 2001
Y1 - 2001
N2 - The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13MeV ᵧ-ray from 16N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137Cs and 60Co, and 16N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident 7-ray energy and its intensity ratio was identified and that the energy of 6MeV 7-ray could be measured by the prototype of the stacked detector.
AB - The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13MeV ᵧ-ray from 16N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137Cs and 60Co, and 16N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident 7-ray energy and its intensity ratio was identified and that the energy of 6MeV 7-ray could be measured by the prototype of the stacked detector.
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U2 - 10.1541/ieejsmas.121.458
DO - 10.1541/ieejsmas.121.458
M3 - Article
AN - SCOPUS:85024457070
SN - 1341-8939
VL - 121
SP - 458
EP - 463
JO - IEEJ Transactions on Sensors and Micromachines
JF - IEEJ Transactions on Sensors and Micromachines
IS - 8
ER -